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Ir2110 Mosfet Driver Circuit Diagram

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The IR2112 is a high voltage IC that acts as a MOSFET driver and IGBT driver. It has independent high and low side referenced output channels with a threshold voltage of 600 V. Bootstrap feature makes it compatible for high side driver applications. Additionally, it has Schmitt triggered inputs that are compatible to the standard CMOS and LSTTL outputs. IR2112 is basically a low and high side driver IC with a voltage range of 10V to 20V.

Furthermore, it has applications that require the circuitry of both high and low-side drive, for example, half-bridge and full-bridge circuits. It is available in 14 Lead PDIP and 16 lead SOIC packages.

IR2112 Pinout Diagram

IR2112 pinout diagram shows that it consists of 14 pins. LO and HO are output pins for low and high side respectively. LIN and HIN are input pins for drive signals such as PWM, SPWM. The rest of the descriptions of the pins are given in pin configuration section.

Pin Configuration Details

The driver IC has 14 pins whose functionalities are mentioned in the table given below:

Pin NumberPin NameDescription
1LOGate drive output of Low voltage side
2COMReturn path for low side driver
3Voltage supply for low voltage driver and its value should be between the range of 10V to 20V.
4, 8, 14NCNo connection for these pins and no use
5VsFloating point return path for low side
6Floating point for high side drive
7HOGate drive output for high driver side
9Voltage supply and its value should be in a range of +3V to +20V with reference to ground or Vss. For normal operation, we use = +5V.
10HINIn phase input logic signal for gate output of high side driver
11SDInput signal for shut down
12LINIn phase input logic signal for gate output of low side driver
13VssGround of the circuit

IR2112 MOSFET/ IGBT driver Features

Ir2110 Mosfet Driver Circuit Diagram

Fundamentals of MOSFET and IGBT Gate Driver Circuits Figure 2. Power MOSFET Models Figure 2c is the switching model of the MOSFET. The most important parasitic components that influences switching performance are shown in this model. Their respective roles are discussed in Section 2.3, which is dedicated to the switching procedure of the device. SMPS circuit have 3 version of the 700w (+-50v 50khz), 800w (+-42v 60khz) and 900w (+-70v 50khz) circuit diagrams for the same smps pwm control output is used to drive the integrated MOSFET sg3525 ir2110, but according to some of the values are different, the forces of the output of the SMPS circuit.

  • High and Low Side Driver IC with source current 0.25 A and sink current 0.5 A
  • It can tolerate negative transient voltage
  • The range of separate voltage supply is from 3.3V to 20V and supply range of gate driver is from 10 to 20 V
  • It has a feature of floating channel which can perform bootstrap operation
  • Inputs and outputs are in phase
  • Matched propagation delay and undervoltage lockout for both channels
  • Threshold voltage is +600 V
  • Cycle by cycle edge-triggered shutdown logic

Equivalent options

  • IR2118
  • IR2101
  • IR2102
  • IR2104
  • IR2106
  • IR2184

Where to use IR2112?

This IC can be used as both Mosfet driver and IGBT driver. These IC's are commonly used in half-bridge circuits for switching Mosfets. You can use this IC in high-frequency applications due to its matched propagation delays. It is used in high voltage applications for switching discrete power Mosfets ON and OFF using low voltage input.

How to use IR2112 MOSFET/IGBT Driver?

The connection diagram of this IC 12R2112 are shown in the figure below. HIN and LIN are the input signals for high and low driver side. They connect to some microcontroller or a voltage supply through a switch and is provided with an input signal of range 4 to 5V. It has a shutdown pin which is provided to protect the circuit in case of over voltages or current by connecting this pin to +5V. It will shut down the circuit.

Bootstrap Capacitor

You can see a capacitor between and Vs from the figure below. This is a bootstrap capacitor and its function is to fully operate the high driver side of Mosfet. One end of the bootstrap capacitor is connected to the diode. The doide will charge the capacitor and prevent discharging when is High. For proper switching of the mosfet gate, this capacitor should be charged up between 10 to 20V. After connecting all the input pins, switch ON the power supply.

If you want to drive high side MOSFET, connect HIN to High signal and HO pin will produce HIGH output. To turn-off the high side, apply low signal on HIN pin. Same is the case of LIN pin. When Vs is HIGH, the output at HO will be equal to Vb level, with respect to Vs, When Vs is LOW, the value on HO will be equal to Vs with reference to Vs which means 0 logic.

Example circuit as a half-bridge

IR2112 Applications

This IC has numerous applications especially switching circuits. Some of its applications include:

  • Designing H-bridge, half-bridge, and full-bridge circuits
  • Switched-mode power supplies
  • Inverters, traction motor control, and induction heating.

2D Diagram

Datasheet

In the previous tutorial, it was discussed that for driving a MOSFET as high side switch, a gate driver circuit needs to be used. The IR2110 IC is one of the high speed and high voltage gate driver ICs for IGBT and power MOSFET. The IC is having independent low and high side output channel.
By using a single IC, a half bridge circuit can be operated in which one MOSFET is in high side configuration and another one is in the low side configuration. For driving the high side MOSFET, this IC uses a bootstrap circuit which otherwise could have to be designed externally. Before using this IC for driving the half or full bridge circuit, it is necessary to test the faultiness of the IC. A faulty IC can give unstable output and may blow up the MOSFET or other components in the circuit. In this tutorial, the method to test the IR2110 IC is discussed.
Components Required –
1. DC power supply of 5V and 12V.
3. Microcontroller atmega328
The IR2110 IC comes in a 14-pin DIP package. It has the following pin configuration –
Fig. 1: List of Components required for IR2110 Gate Driver IC Tester
The IR-2110 has the following pin diagram –
Fig. 2: Pin Diagram of IR2110 IC
The IR2110 has the following internal circuitry –
Source: www.irf.com
In the internal circuit diagram of IR2110, the low side and high side blocks are separated with a dotted line for simplicity. The upper half circuit works for driving high side MOSFET and lower half is for driving the low side MOSFET.
As in accordance to the pin configuration of IR2110, the SD (shutdown) pin is used to shutdown the IC. This pin is active high, so for enabling the IC to work, this pin is connected to the ground. The VDD is the supply voltage for driving the internal circuitry of the IC and it should be in between 3V to 20 V (with reference to Vss) as per the datasheet. The VCC is directly connected to the drain of internal MOSFET of low side driver(as shown in internal circuit diagram of IR2110) and it can be in between 10V to 20V. For testing the IR 2110 IC, 5V is taken as VDD and 12V is taken as VCC. When the input at Lin or Hin pin is high then the IC gives High output at LO or HO pin corresponding to the input supply. When logic input at Lin and Hin are low then a low is obtained at LO and HO pin.
A square wave is applied at the Lin and Hin pin with the zero phase difference between them and the wave is generated using a microcontroller. For a good IC when Hin pin is high then it should give high at output otherwise low, same for Lin and LO.
For testing the IC, the 5V is taken as VDD and 12V is taken as VCC. The supply voltage for VDD and VCC can be drawn from a battery and then regulated to 5V and 12V level using 7805 and 7812 voltage regulator ICs. For voltage regulation, the anode of the battery should be connected to pin 1 of the voltage regulator ICs and pin 2 should be grounded. The respective voltage outputs then can be drawn from the pin 3 of the regulator ICs.
The square wave which has to be applied at the input of Lin and Hin pin is generated by a microcontroller. The controller works on TTL (transistor- transistor logic). So to avoid any synchronization error in between VDD and Hin/Lin input supply, 5V is taken as VDD. So, the VDD pin is connected to 5V while VCC and Vb pins are connected to 12V power source. The SD, Vss, COM and Vs pins are connected to the ground.
The square wave can be generated using any microcontroller board. In testing for this IC, the square wave has been generated using Arduino board. The Arduino is the most popular prototyping board and can be easily programmed to generate a perfect square wave. Since the square wave has to be applied at two pins of the IR2110, the Arduino is programmed to output square wave from two of its pins.
While assembling the circuit for testing the IR2110 IC, following precautions must be taken care of –
1. Never exceed the input voltage of VDD and VCC above their range as it may damage the IC. Check the input voltage limits from the datasheet of IR2110.
2. Always common the ground of 12V and 5V supply.
3. If TTL power source is used for Lin and Hin pin then VDD must be taken equal to 5V. This should be done to avoid any undermine state at the output.
4. Apply a clean DC to the IC to avoid any voltage spikes. For this, an electrolyte capacitor in parallel with ceramic capacitor for filtering the input power supply can be used.
5. Make proper connections as loose connections can result into abrupt wave at the output.
Fig. 4: Prototype of circuit for testing IR2110 MOSFET Gate Driver IC

Ir2110 Mosfet Driver Circuit Diagram Circuit

How the circuit works –
From the internal circuit it can be seen that in high side and lows side, there are two MOSFETs at the end followed by a latch (on high side) and an AND gate (on low side).

Fig. 5: Internal Circuit Diagram of IR2110 Gate Driver IC

Ir2110 Spice Model

When the output from SR latch (on high side) is low then a bubble at output convert this to high and this makes the MOSFET Q1 ON and MOSFET Q2 OFF. This gives high output at HO pin. Whenever the SR latch gives low then it turns ON the MOSFET Q2 and turns OFF the MOSFET Q1 and a low is obtained at LO pin.

Similarly, on the low side when the output from AND gate is high then MOSFET Q3 is ON and MOSFET Q4 is OFF. So, high output is obtained at LO pin. In the case of low output from AND gate then LO pin gives low output.
The generated square wave from the controller should be applied at the Hin and Lin pins and at the output pins (LO and HO respectively) a square wave of same amplitude and frequency should be obtained. If the exact square wave is not obtained at the LO and HO pins or no square wave is output fromeither pin, then IR2110 in case is faulty. If the IC is heating too fast despite not exceeding input supply voltages beyond limit, then also the IC can be predicted to be faulty.
Testing the IR2110 IC –
After applying the square waves at Lin and Hin pins, the following voltage waveforms at the Lo and Ho pins were observed on a Cathode Ray Oscilloscope.

Fig. 6: Graph showing Output Waveform at Ho Pin

Ir2110 Schematic

Fig. 7: Graph showing Output Waveform at Lo Pin

From the voltage waveforms observed on CRO, it can be seen that it has the same amplitude and frequency as of the input square wave. So, the IR2110 IC under test is working properly. It can now be used as a gate driver circuit for Half bridge or full H-bridge circuit without doubt.

Ir2110 Circuit

In the next tutorial learn about improving the switching time of relays.

Ir2110 Mosfet Driver Circuit Diagram Schematics

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